Thin films of Zinc lead telluride (ZnxPb(1-x)Te) of solid solution with x = 0.1, 0.2, 0.3, 0.4, and 0.5 were synthesized, from the resulting ZnTe and PbTe composition used in preparation of thin films. The deposited samples were annealed and annealed samples were used for characterization. The semiconducting and thermoelectric properties of the samples were investigated by measuring electrical resistivity and Seeback coefficient in the temperature range from 300 to 473 K for annealing samples. Activation energy for charge transport have been evaluated and found in the range of 0.269 to 0.396 eV. Thermoelectric power has been measured and found to be positive indicating that the samples are p-type semiconducting material. The Xray diffraction analysis and EDAX confirmed that films are polycrystalline in nature
