InSe thin films were prepared on glass substrate by vacuum evaporation technique at a pressure
of 10-5 torr. The thermo electric properties of the films was determined over the thickness range
of 1000 ���º, 1500 ���º, 2000 ���º, 2500 ���º and 3000 ���º. Thermo electric properties shows a positive
sign exhibiting P- type semiconductig nature of films. Fermi energy and absorption coefficient
were determined. The estimated values of Fermi energy and absorption coefficient are 0.089 to
1.23 eV and 1.43 to 1.94 respectively. The XRD analysis confirms that the deposited films are
polycrystalline having cubic structure.
