There are some principle bottles which neck to the scaling of silicon devices. The main point is that integration density has a hained in credible heights and on-chip functionality. It has advanced from simple adders to systems-on-chip in the same time frame. It now appears that thin silicon oxinitride and silicon nitride can remain the principle gate dielectric materials for the future of logic, CMIS (Complementary-Metal-Insulator-Semiconductor), and memory devices. This paper discusses the advantages of these films as gate dielectric of CMIS generations.
