The studies on the effect of electron irradiation on the current voltage characteristics of commercially available bipolar transistor (BJT) and MOSFETs are carried out at elevated temperature. A small home-made furnace with PID temperature controller is used to rise the temperature of the devices during irradiation. The irradiation induced degradation of the device parameters is found to decrease by increasing the temperature of the devices during irradiation. However, the effect of irradiation induced degradation on the characteristics of the devices is observed even at temperatures as high as 300oC. This indicates that creation of defects dominates over simultaneous thermal annealing of these defects even at high temperatures.
