Recently, nanostructured thin films have attracted research community from the world as they shows potential applications in semiconductor industry,particularly in fabrication of optoelectronic devices. In the present investigation (Cu2S)x(As2S3)1-x thin films were deposited onto glass substrates by using chemical bath deposition (CBD) method at room temperature. The XRD studies reveal that the as deposited (Cu2S)x(As2S3)1-x thin films have mixed phase of hexagonal and monoclinic lattice due toCu2S and As2S3 respectively. However, the precipitated powder shows mixed phase of orthorhombic and monoclinic structure. The electrical resistivity, activation energy and optical band gap energy of (Cu2S)x(As2S3)1-xfilm is found composition dependent
