Thin films having different thickness of InSb were deposited by thermal evaporation
techniques, onto precleaned amorphous glass substrate. The surface morphological
properties of films were evaluated by XRD, Scanning Electron Microscope (SEM), EDAX,
Transmission Electron Microscopy (TEM) and optical microscopy. The electrical transport
properties of annealed thin films have been evaluated. Thermo Electrical parameters such as
Fermi energy (0.11478 to 0.0.9159 eV), absorption coefficient (0.37454 to 10.58) has been
estimated. The X-ray diffraction analysis confirms that films are polycrystalline having cubic
structure cell. The grain size is found to be 11.32 nm.