Reactive plasma process systems are developed via installation of inductively -coupled plasmas (ICP) sustained with low-inductance antenna (LIA) for low-temperature fabrication of flexible electronics, which require large area and low damage processes with reactivity control capabilities at low substrate temperature. Major advantage of the reactive processing system is that the reactivity during filmdeposition processes are often enhanced and controlled via low-damage and high-density plasma production for low-temperature processing of devices. The reactive plasma processes have been applied to sputtering deposition of transparent amorphous oxide semiconductor a-InGaZnOx (a-IGZO), which has attracted great attentions as key material for next-generation flexible electronics.
