Semiconducting Bismuth sulphide (Bi2S3) thin films have been deposited on glass substrates by the simple and economical chemical bath deposition technique. We report the deposition and optimization of the growth parameters that maximizes the thickness of the deposited film. Deposited Bi2S3 films are found to be polycrystalline nature by XRD studies. The composition was found homogeneous and stoichiometric by EDAX analysis.
