The iron selenide thin films were successfully deposited on to the glass substrates at 573 K temperature using spray pyrolysis technique. Along with Fe and Se source, acetic acid (CH3-COOH) was used as a complexing agent during the deposition process. The structural, morphological, electrical and optical properties of the deposited films have been studied using X-ray diffraction, scanning electron microscopy, atomic force microscopy and UV-Vis spectrophotometer respectively. The XRD analysis shows that the spray deposited FeSe thin films are nanocrystalline with tetragonal lattice. The surface studies of FeSe films shows porous morphology with spherical grains which is improved with addition of acetic acid. The AFM image indicates that the as deposited FeSe thin films are uniform, compact and well covered to the substrate. The absorption studies shows that films have direct band gap which varies between 3.05 to 2.60 eV depending on the quality of acetic acid added in the spray solution. The variation of electrical resistivity with temperature confirms semiconductor behavior of FeSe
