The bandwidth of Indium antimonide can be reduced by a considerable value with addition of very small amount nitrogen. The resultant material will be suitable for infrared detection in long wavelength region (about 8-10 mm).This material that is, the dilute nitride of Indium Antimonide is grown by vertical directional solidification technique. In this technique the growth of a single crystal occurs without providing seed from outside. The Indium and antimony in pure form (6N) are mixed in Stoichiometric proportion and sealed inside a quartz ampoule. The ampoule is conical from the lower side. The ampoule is sealed at low pressure (200 torr) of argon. The growth temperature is 525 degree Celsius. The ingot is removed from ampoule and cut into wafers for further analysis. EDAX analysis confirms uniform distribution of nitrogen inside the ingot. The material shows n type behavior with large carrier concentration and low mobility compared to indium antimonide grown under same conditions. Using powder X ray method, lattice parameter is determined.
