Tungsten diselenide (WSe2) semiconductor thin films were electrodeposited by the galvanostatic route. Polycrystalline WSe2 thin films were deposited on chemo-mechanically and ultrasonically cleaned stainless steel (ss) and fluorine doped tin oxide (F:SnO2 or FTO) coated conducting glass substrates. The variation of growth rate with temperature has been studied. Both the as-deposited and annealed films showed hexagonal structure. The optical absorption studies showed a direct band gap nature of the WSe2 films. The composition of the film was studied by EDAX analysis. The surface morphology of the films was studied by scanning electron microscopy (SEM). The type of the semiconductor was found to be n-type and confirmed by hot probe technique. Thus the material is strongly applicable in semiconducting devices.
