Single crystals of pure and N-N’allyl thiourea doped KDP were grown successfully by slow evaporation technique. Allyl thiourea was added in four different weight percentages (2%, 4%, 6% and 8%). In order to improve the electrical characteristics of KDP crystal, a dopant was incorporated into the parent crystal. The pure and doped crystals were characterized by Fourier transform infrared spectroscopy (FTIR) analysis and electrical measurements. The capacitance (Ccrys) and dielectric loss factor (tan δ) measurements were carried out to achieve an accuracy of +2% using an systronic LCR meter (A) for a fixed frequency of 1KHz at various temperatures ranging from 40 - 150oC along a- and c- directions. Here, the results are discussed in the following section.
