Indium antimonide thin films of different thickness (300-400) nm, deposited by electron beam evaporation technique on suitable ultrasonically cleaned glass substrates at different substrate temperature (303-373) K, are of polycrystalline nature having zincblende structure. All deposited films have orientation along (111) and (220) planes. Hall measurements indicate that the films were n-type, having carrier concentration ~1018 cm-3 and mobility ~103 cm2/Vs for the film thickness of (300-400)nm. It is observed that the resistivity (ρ), carrier concentration (n) decreases while Hall mobility (μ) increases with the increase of substrate temperature & film thickness.
