Thin films of ZnTe and MgPc were prepared by vacuum deposition technique. The films were deposited at room temperature onto glass substrates with the vacuum pressure at 10-5 Torr and with substrate thickness about 200nm to 300 nm. The films were annealed at 500C, 1000C, 150°C and 2000C. The effect of annealing on the structural, optical, electrical properties and surface morphology were studied. The samples exhibited broad absorption spectra from visible to near infrared region (300nm to 1200nm). The photoconductivity was found to increase with annealing temperature up to 1500C. The temperaturedependent conductivity of the observed samples was studied and the corresponding activation energies of the samples were determined. The band gaps of the films were found to be 2.23eV for ZnTe and 2.61eV for MgPc.
