The grown crystals of glycine were used for edge dislocation. Etchant A [85% formaldehyde, 13% distilled water, 2% nitric acid (analar grade)] and etchant B [Propionic acid and formic acid in the volume ratio 9:1] reveals the sites of edge dislocations on (010) cleavage planes of glycine Potassium Sulphate (GPS) crystals. Ethyl alcohol (not less than 99%) was used as rinsing agent. It is found that the etchant B is superior to etchant A, as the surface dislocation with etchant B along [110] direction is less than with etchant A. n-propyl alcohol with distilled water in the volume ratio 3:1 is reported as chemical polishing agent which remove the surface layer at about 0.4 μm. min-1. The structure of isolated pits form on the surface and of those formed along low angle grain boundaries is the same, which suggest that pits are probably formed at the site of edge dislocations. The density of pits of low angle grain boundary remains the same after removing the surface layer of about 4 μm. The implications are discussed
