Copper Indium Disulphide (CuInS2) is an efficient absorber material for photovoltaic and solar cell applications. In this paper Zn (0.02, 0.03M) doped CuInS2 thin films are (Cu/In=1.25) deposited on to glass substrates in the temperature range 300-4000C. The EDAX results confirm the presence of Cu, In, S and Zn in the films. SEM photographs reveal crystalline nature of the films at various temperature ranges. Well defined, broad Blue and Green band emissions are exhibited by Zn-doped CuInS2 thin films which show better crystallinity of the deposited films. All the films present low resistivity (ρ) values and exhibit semiconducting nature. Hence, Zn species can be used as a donor and acceptor impurity in CuInS2 thin films to fabricate efficient solar cells, photovoltaic devices and good IR Transmitters.
