We have theoretically investigated drain current versus drain voltage characteristics for GaN MOSFET at 300K using one-particle Monte-Carlo method. The Boltzmann transport equation is solved incorporating deformation potential acoustic phonon, polar optical phonon, impurity and intervalley phonon scatterings. The variation of drain current with drain voltage exhibits a negative differential resistance (NDR) effect at 300K. The current-voltage curves show the NDR effect at low electric fields for the lattice temperatures considered.
