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Anodic oxide films of Zr-4 in 0.1M ammonium oxalate by AFM studies | Abstract
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Abstract

Anodic oxide films of Zr-4 in 0.1M ammonium oxalate by AFM studies

Author(s): J. Padmaja and Ch. Anjaneyulu

The surface of zircaloy-4 anodized at a constant current density of 8 mA.cm?¢??»² in 0.1M ammonium oxalate at a potential 0−79 V, was characterized by means of surface science technique AFM. It was found that during anodization by temperature effect (various temperatures ranging from 273K to 333K using galvanostatic technique. the surface oxide grows with modifying the topography. The incorporation of oxalate dianions from the electrolyte to the surface during the anodizing process changes the topology. Anodized oxide films grown with relatively high voltages, the zirconia (ZrO?¢??????) formed over the Zr-4 in 0.1M ammonium oxalate at 333K appeared less rougher and protruded when compared with 288K and 318K. Anodic oxide films were homogeneous and rough with nanosized grains. When the anodization voltage was 79V the average roughness (Ra) of the zirconia film reached 3.9nm, and it is increased to 8.8nm (288K) and fallen down to 2.3nm (333K) and the oxide formed changed abruptly to become as less roughness as that formed on non-anodized.