The effect of compositional variations on various properties of chalcogenide glasses has been increased in recent years. The effect on the physical properties viz. average coordination number, lone-pair electron Average heat of atomization, mean bond energy, glass transition temperature, etc., with the variation in Ge content has been studied theoretically in the present work for GexSb32-xTe68 (x = 3, 6, 9, 12, 15, 18, 21 at. %) glassy semiconductor. The glass transition temperature and mean bond energy have been calculated by using the Tichy-Ticha approach. Almost all the parameters, studied here, except the lone-pair electron L and parameter R, were found to increase with the increase in Ge content, thus making this suitable for phase change optical recording
