Optical and Electrical Transport Properties of Transition Metal Dichalcogenide MoSe2 Thin Films
By S. N. Gawale, R.M. Mane, S. R. Mane, R.R. Kharade,S.M. Patil and P.N. Bhosale
The transition metal dichalcogenide, MoSe2 thin films were deposited on glass and stainless steel substrates by using Arrested Precipitation Technique. The reaction between MoO3, TEA, Sodium dithionate and Sodium selenosulphate in an aqueous alkaline medium at 333 K has been used for synthesis. The deposited thin films have been characterized by using optical absorption, x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray analysis (EDAX), atomic force microscopy (AFM),and electrical transport properties.The optical absorption study shows direct transition having band gap of 1.76 eV. The x-ray diffraction study reveals that the films are polycrystalline with hexagonal crystal structure. The electrical transport property studies revealed that the temperature dependence of an electrical conductivity has a distinct conduction region. The thermoelectric power measurements showed that the thermally generated voltage was of the order of several microvolts and exhibited n-type conduction. The surface morphology study by SEM and AFM shows that the grains are uniformly distributed over the entire surface and the deposition is uniform, compact and pin hole free.EDAX study reveals the stoichiometric nature of the films.
Keywords: Transition metal dichalcogenide, Thin films, Chemical Synthesis, Optical properties, Scanning Electron Microscopy, X-ray diffraction, Electrical transport properties.
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