Thermal Oxynitridation and nitridation on silicon substrate

By A. Bahari, S. Tobarari and H. Rafiee

Abstract

There are some principle bottles which neck to the scaling of silicon devices. The main point is that integration density has a hained in credible heights and on-chip functionality. It has advanced from simple adders to systems-on-chip in the same time frame. It now appears that thin silicon oxinitride and silicon nitride can remain the principle gate dielectric materials for the future of logic, CMIS (Complementary-Metal-Insulator-Semiconductor), and memory devices. This paper discusses the advantages of these films as gate dielectric of CMIS generations.

 

Key Words : Nano transistor, Scaling of Silicon, Leakage Current and Gate dielectric

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